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Collection	Date	Title	Authors
[物理研究所] 期刊論文	2000	Temperature dependent performance of GaN Schottky diode rectifiers	Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Lee,CM; Chuo,CC; Chyi,JI; Chi,GC; Han,J; Chu,SNG; Wilson,RG
[電機工程研究所] 期刊論文	2001	GaN electronics for high power, high temperature applications	Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG
[電機工程研究所] 期刊論文	2000	Processing and device performance of GaN power rectifiers	Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ
[電機工程研究所] 期刊論文	2000	Surface and bulk leakage currents in high breakdown GaN rectifiers	Ren,F; Zhang,AP; Dang,GT; Cao,XA; Cho,H; Pearton,SJ; Chyi,JI; Lee,CM; Chuo,CC
[電機工程研究所] 期刊論文	2000	Temperature dependence of GaN high breakdown voltage diode rectifiers	Chyi,JI; Lee,CM; Chuo,CC; Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Chu,SNG; Wilson,RG
[電機工程研究所] 期刊論文	1999	Growth and device performance of GaN Schottky rectifiers	Chyi,JI; Lee,CM; Chuo,CC; Chi,GC; Dang,GT; Zhang,AP; Ren,F; Cao,XA; Pearton,SJ; Chu,SNG; Wilson,RG