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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29273


    Title: Growth and device performance of GaN Schottky rectifiers
    Authors: Chyi,JI;Lee,CM;Chuo,CC;Chi,GC;Dang,GT;Zhang,AP;Ren,F;Cao,XA;Pearton,SJ;Chu,SNG;Wilson,RG
    Contributors: 電機工程研究所
    Keywords: FIELD-EFFECT TRANSISTORS;POWER DEVICES;TEMPERATURE-DEPENDENCE;DIODES;BREAKDOWN;VOLTAGE
    Date: 1999
    Issue Date: 2010-06-29 20:20:33 (UTC+8)
    Publisher: 中央大學
    Abstract: Undoped, 4 mu m thick GaN layers grown by Metal Organic Chemical Vapor Deposition were used for fabrication of high stand off voltage (356 V) Schottky diode rectifiers. The figure of merit V-RB(2)/R-ON, where V-RB is the reverse breakdown voltage and R-ON is the on-resistance, was similar to 4.53 MW-cm(-2) at 25 degrees C. The reverse breakdown voltage displayed a negative temperature coefficient, due to an increase in carrier concentration with increasing temperature. :Secondary Ion Mass Spectrometry measurements showed that Si and O were the most predominant electrically active impurities present the GaN.
    Relation: MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    Appears in Collections:[電機工程研究所] 期刊論文

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