Undoped, 4 mu m thick GaN layers grown by Metal Organic Chemical Vapor Deposition were used for fabrication of high stand off voltage (356 V) Schottky diode rectifiers. The figure of merit V-RB(2)/R-ON, where V-RB is the reverse breakdown voltage and R-ON is the on-resistance, was similar to 4.53 MW-cm(-2) at 25 degrees C. The reverse breakdown voltage displayed a negative temperature coefficient, due to an increase in carrier concentration with increasing temperature. :Secondary Ion Mass Spectrometry measurements showed that Si and O were the most predominant electrically active impurities present the GaN.
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MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
