"Lee,CM"的相關文件
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類別 |
日期 |
題名 |
作者 |
檔案 |
| [光電科學研究所] 期刊論文 |
1992 |
PATTERN-RECOGNITION WITH CIRCULAR HARMONIC FILTERING AND PHASE-ONLY CIRCULAR HARMONIC FILTERING USING A VANDER-LUGT FILTER |
YAU,HF; TONG,YP; LEE,CM; CHANG,CC; CHANG,MW |
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| [光電科學研究所] 期刊論文 |
1989 |
THE FREQUENCY-RESPONSE OF AN ATTENUATED TOTAL REFLECTION MODULATOR |
CHIAO,DL; LEE,CM |
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| [光電科學與工程學系] 期刊論文 |
2001 |
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chou,CC; Lee,CM |
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| [物理研究所] 期刊論文 |
2000 |
Temperature dependent performance of GaN Schottky diode rectifiers |
Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Lee,CM; Chuo,CC; Chyi,JI; Chi,GC; Han,J; Chu,SNG; Wilson,RG |
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| [物理研究所] 期刊論文 |
1978 |
ELECTRON BREMSSTRAHLUNG ANGULAR-DISTRIBUTIONS IN THE KEV ENERGY-RANGE |
TSENG,HK; PRATT,RH; LEE,CM |
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| [物理研究所] 期刊論文 |
1977 |
BREMSSTRAHLUNG SPECTRUM FROM ATOMIC IONS |
LEE,CM; PRATT,RH; TSENG,HK |
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| [物理研究所] 期刊論文 |
1976 |
ELECTRON BREMSSTRAHLUNG SPECTRUM, 1-500 KEV |
LEE,CM; KISSEL,L; PRATT,RH; TSENG,HK |
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| [物理研究所] 期刊論文 |
1975 |
ATOMIC NUMBER AND ENERGY-DEPENDENCE OF ELECTRON BREMSSTRAHLUNG SPECTRUM |
TSENG,HK; CHINA,RO; PRATT,RH; LEE,CM; KISSEL,L |
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| [經濟學系] 期刊論文 |
2011 |
Does foreign direct investment really enhance China's regional productivity? |
Lin,CH; Lee,CM; Yang,CH |
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| [電機工程研究所] 期刊論文 |
2006 |
HBP: Improvement in BP algorithm for an adaptive MLP decision feedback equalizer |
Yang,SS; Ho,CL; Lee,CM |
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| [電機工程研究所] 期刊論文 |
2005 |
Low resistance WSix-based ohmic contacts on n-type GaN |
Pan,CC; Chen,MS; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2005 |
TSK-based decision feedback equalizer using an evolutionary algorithm applied to QAM communication systems |
Siu,S; Ho,CL; Lee,CM |
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| [電機工程研究所] 期刊論文 |
2004 |
InGaN-GaN MQW LEDs with current blocking layer formed by selective activation. |
Lee,CM; Chuo,CC; Liu,YC; Chen,IL; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes |
Pan,CC; Lee,CM; Liu,JW; Chen,GT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Overberg,ME; Frazier,R; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2003 |
Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Overberg,ME; Thaler,GT; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM |
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| [電機工程研究所] 期刊論文 |
2003 |
High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer |
Lee,CM; Chuo,CC; Chen,IL; Chang,JC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
Response to "Comment on 'AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy' " [Appl. Phys. Lett. 83, 3626 (2003)] |
Kikuchi,A; Bannai,R; Kishino,K; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy |
Kikuchi,A; Bannai,R; Kishino,K; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy |
Lai,CY; Hsu,TM; Chang,WH; Tseng,KU; Lee,CM; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing |
Chuo,CC; Chang,MN; Pan,FM; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Localized and quantum-well state excitons in AlInGaN laser-diode structure |
Chuo,CC; Chen,GT; Lin,MI; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Single-crystal GaN/Gd2O3/GaN heterostructure |
Hong,M; Kwo,J; Chu,SNG; Mannaerts,JP; Kortan,AR; Ng,HM; Cho,AY; Anselm,KA; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Comparison of GaN p-i-n and Schottky rectifier performance |
Zhang,APP; Dang,GT; Ren,F; Cho,H; Lee,KP; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2001 |
GaN electronics for high power, high temperature applications |
Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2001 |
Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells |
Chuo,CC; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Laser-induced activation of p-type GaN with the second harmonics of a Nd : YAG laser |
Cheng,YC; Liao,CC; Feng,SW; Yang,CC; Lin,YS; Ma,KJ; Chou,CC; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells |
Lai,CY; Hsu,TM; Chang,WH; Tseng,KU; Lee,CM; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors |
Johnson,JW; Gila,BP; Luo,B; Lee,KP; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Ren,F |
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| [電機工程研究所] 期刊論文 |
2001 |
Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes |
Lee,CM; Chuo,CC; Dai,JF; Zheng,XF; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Schottky rectifiers fabricated on free-standing GaN substrates |
Johnson,JW; LaRoch,JR; Ren,F; Gila,BP; Overberg,ME; Abernathy,CR; Chyi,JI; Chou,CC; Nee,TE; Lee,CM; Lee,KP; Park,SS; Park,YJ; Pearton,SJ |
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| [電機工程研究所] 期刊論文 |
2000 |
Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells |
Lin,YS; Ma,KJ; Hsu,C; Feng,SW; Cheng,YC; Liao,CC; Yang,CC; Chou,CC; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells |
Chuo,CC; Lee,CM; Nee,TE; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers |
Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2000 |
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor |
Johnson,JW; Luo,B; Ren,F; Gila,BP; Krishnamoorthy,W; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2000 |
High voltage GaN Schottky rectifiers |
Dang,GT; Zhang,AP; Ren,F; Cao,XNA; Pearton,SJ; Cho,H; Han,J; Chyi,JI; Lee,CM; Chuo,CC; Chu,SNG; Wilson,RG |
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| [電機工程研究所] 期刊論文 |
2000 |
Processing and device performance of GaN power rectifiers |
Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ |
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| [電機工程研究所] 期刊論文 |
2000 |
Spatial distribution of electrical properties in GaN p-i-n rectifiers |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2000 |
Stimulated emission study of InGaN/GaN multiple quantum well structures |
Liao,CC; Feng,SW; Yang,CC; Lin,YS; Ma,KJ; Chuo,CC; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Surface and bulk leakage currents in high breakdown GaN rectifiers |
Ren,F; Zhang,AP; Dang,GT; Cao,XA; Cho,H; Pearton,SJ; Chyi,JI; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2000 |
Temperature dependence of GaN high breakdown voltage diode rectifiers |
Chyi,JI; Lee,CM; Chuo,CC; Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Chu,SNG; Wilson,RG |
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| [電機工程研究所] 期刊論文 |
2000 |
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM |
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| [電機工程研究所] 期刊論文 |
2000 |
Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes |
Hong,M; Anselm,KA; Kwo,J; Ng,HM; Baillargeon,JN; Kortan,AR; Mannaerts,JP; Cho,AY; Lee,CM; Chyi,JI; Lay,TS |
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| [電機工程研究所] 期刊論文 |
1999 |
Growth and device performance of GaN Schottky rectifiers |
Chyi,JI; Lee,CM; Chuo,CC; Chi,GC; Dang,GT; Zhang,AP; Ren,F; Cao,XA; Pearton,SJ; Chu,SNG; Wilson,RG |
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| [數據分析方法研究中心 ] 期刊論文 |
2010 |
The relationship between aminoterminal propeptide of type III procollagen and heart rate variability parameters in heart failure patients: a potential serum marker to evaluate cardiac autonomic control and sudden cardiac death |
Lin,YH; Lin,C; Lo,MT; Lin,HJ; Wu,YW; Hsu,RB; Chao,CL; Hsu,HC; Wang,PC; Wu,VC; Wang,SS; Lee,CM; Chien,KL; Ho,YL; Chen,MF; Peng,CK |
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