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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32524


    Title: AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy
    Authors: Kikuchi,A;Bannai,R;Kishino,K;Lee,CM;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: HETEROSTRUCTURES;GAN;OSCILLATIONS;IMPROVEMENT;TEMPERATURE
    Date: 2002
    Issue Date: 2010-07-06 18:30:44 (UTC+8)
    Publisher: 中央大學
    Abstract: AlN/GaN double-barrier resonant tunneling diodes (DB-RTDs) were fabricated on (0001) Al2O3 substrates by molecular-beam epitaxy, using a rf-plasma nitrogen source. The AlN/GaN DB-RTDs were designed to have a 3-ML-thick GaN quantum well and 4-ML-thick AlN
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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