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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32632


    Title: SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors
    Authors: Johnson,JW;Gila,BP;Luo,B;Lee,KP;Abernathy,CR;Pearton,SJ;Chyi,JI;Nee,TE;Lee,CM;Chuo,CC;Ren,F
    Contributors: 電機工程研究所
    Keywords: GAN;HFETS;GENERATION;DEVICES
    Date: 2001
    Issue Date: 2010-07-06 18:34:44 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN-based metal oxide semiconductor field effect transistors (MOSFETs) were demonstrated using a stacked gate oxide consisting of single-crystal Gd2O3 and amorphous SiO2. Gd2O3 provides a good oxide/semiconductor interface and SiO2 reduces the gate leakag
    Relation: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    Appears in Collections:[電機工程研究所] 期刊論文

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