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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32467

    Title: Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer
    Authors: Polyakov,AY;Smirnov,NB;Govorkov,AV;Kim,J;Ren,F;Thaler,GT;Overberg,ME;Frazier,R;Abernathy,CR;Pearton,SJ;Lee,CM;Chyi,JI;Wilson,RG;Zavada,JM
    Contributors: 電機工程研究所
    Date: 2003
    Issue Date: 2010-07-06 18:28:49 (UTC+8)
    Publisher: 中央大學
    Abstract: Electrical and luminescent properties of normal p-side-up and inverted n-side-up light emitting diodes (p-LEDs and n-LEDs) and the effect of Mn incorporation into the upper n-type contact layer structure of GaN-based multiquantum-well MQW LEDs were studie
    Appears in Collections:[電機工程研究所] 期刊論文

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