Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer

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Title:	Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer
Authors:	Polyakov,AY;Smirnov,NB;Govorkov,AV;Kim,J;Ren,F;Thaler,GT;Overberg,ME;Frazier,R;Abernathy,CR;Pearton,SJ;Lee,CM;Chyi,JI;Wilson,RG;Zavada,JM
Contributors:	電機工程研究所
Keywords:	MOLECULAR-BEAM EPITAXY;PERSISTENT PHOTOCONDUCTIVITY;ROOM-TEMPERATURE;SPIN INJECTION;GAN FILMS;SEMICONDUCTORS;FERROMAGNET
Date:	2003
Issue Date:	2010-07-06 18:28:49 (UTC+8)
Publisher:	中央大學
Abstract:	Electrical and luminescent properties of normal p-side-up and inverted n-side-up light emitting diodes (p-LEDs and n-LEDs) and the effect of Mn incorporation into the upper n-type contact layer structure of GaN-based multiquantum-well MQW LEDs were studie
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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