Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer

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题名:	Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer
作者:	Polyakov,AY;Smirnov,NB;Govorkov,AV;Kim,J;Ren,F;Thaler,GT;Overberg,ME;Frazier,R;Abernathy,CR;Pearton,SJ;Lee,CM;Chyi,JI;Wilson,RG;Zavada,JM
贡献者:	電機工程研究所
关键词:	MOLECULAR-BEAM EPITAXY;PERSISTENT PHOTOCONDUCTIVITY;ROOM-TEMPERATURE;SPIN INJECTION;GAN FILMS;SEMICONDUCTORS;FERROMAGNET
日期:	2003
上传时间:	2010-07-06 18:28:49 (UTC+8)
出版者:	中央大學
摘要:	Electrical and luminescent properties of normal p-side-up and inverted n-side-up light emitting diodes (p-LEDs and n-LEDs) and the effect of Mn incorporation into the upper n-type contact layer structure of GaN-based multiquantum-well MQW LEDs were studie
關聯:	SOLID-STATE ELECTRONICS
显示于类别:	[電機工程研究所] 期刊論文

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