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    Items for Author "Park,YJ" 

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    Showing 8 items.

    Collection Date Title Authors Bitstream
    [化學工程與材料工程研究所] 期刊論文 2002 Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers Johnson,JW; Zhang,AP; Luo,WB; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI
    [電機工程研究所] 期刊論文 2004 2.6 A, 0.69 MW cm(-2) single-chip bulk GaN p-i-n rectifier Irokawa,Y; Luo,B; Kang,BS; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ
    [電機工程研究所] 期刊論文 2004 DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates Irokawa,Y; Luo,B; Ren,F; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ; Pearton,SJ
    [電機工程研究所] 期刊論文 2004 Reduction of surface-induced current collapse in AlGaN/GaN HFETs on freestanding GaN substrates Irokawa,Y; Luo,B; Ren,F; Gila,BP; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ
    [電機工程研究所] 期刊論文 2003 Current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers Irokawa,Y; Luo,B; Kim,J; LaRoche,JR; Ren,F; Baik,KH; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Park,SS; Park,YJ
    [電機工程研究所] 期刊論文 2002 1.6 A GaN Schottky rectifiers on bulk GaN substrates Johnson,JW; Lou,B; Ren,F; Palmer,D; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Vertical and lateral GaN rectifiers on free-standing GaN substrates Zhang,AP; Johnson,JW; Luo,B; Ren,F; Pearton,SJ; Park,SS; Park,YJ; Chyi,JI
    [電機工程研究所] 期刊論文 2001 Schottky rectifiers fabricated on free-standing GaN substrates Johnson,JW; LaRoch,JR; Ren,F; Gila,BP; Overberg,ME; Abernathy,CR; Chyi,JI; Chou,CC; Nee,TE; Lee,CM; Lee,KP; Park,SS; Park,YJ; Pearton,SJ

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