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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32638


    Title: Schottky rectifiers fabricated on free-standing GaN substrates
    Authors: Johnson,JW;LaRoch,JR;Ren,F;Gila,BP;Overberg,ME;Abernathy,CR;Chyi,JI;Chou,CC;Nee,TE;Lee,CM;Lee,KP;Park,SS;Park,YJ;Pearton,SJ
    Contributors: 電機工程研究所
    Keywords: BREAKDOWN VOLTAGE;TEMPERATURE-DEPENDENCE;DIODES;FIELD
    Date: 2001
    Issue Date: 2010-07-06 18:34:57 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN Schottky rectifiers have been fabricated on free-standing substrates and on epi/substrate structures. Forward turn-on voltages were as low as 3 V at 25 degreesC. Reverse recovery was complete in <600 ns; with a characteristic time constant of <similar
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

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