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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32388


    Title: DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates
    Authors: Irokawa,Y;Luo,B;Ren,F;Pan,CC;Chen,GT;Chyi,JI;Park,SS;Park,YJ;Pearton,SJ
    Contributors: 電機工程研究所
    Keywords: HIGH-ELECTRON-MOBILITY;VAPOR-PHASE EPITAXY;BULK GAN;MICROWAVE NOISE;HEMTS;PERFORMANCE;PASSIVATION;TEMPLATES;OXIDE
    Date: 2004
    Issue Date: 2010-07-06 18:26:06 (UTC+8)
    Publisher: 中央大學
    Abstract: AlGaN/GaN heterostructure field-effect transistors (HFETs) were grown by metallorganic chemical vapor deposition on either sapphire or freestanding GaN substrates. The devices in the latter case show consistently lower knee voltage, higher output resistan
    Relation: ELECTROCHEMICAL AND SOLID STATE LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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