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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32469

    Title: Current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers
    Authors: Irokawa,Y;Luo,B;Kim,J;LaRoche,JR;Ren,F;Baik,KH;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI;Park,SS;Park,YJ
    Contributors: 電機工程研究所
    Date: 2003
    Issue Date: 2010-07-06 18:28:53 (UTC+8)
    Publisher: 中央大學
    Abstract: p-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage, V-F was similar to5 V at 300 K and displayed a positive temperature coefficient. The specific on-state resistance (R-ON) was similar t
    Appears in Collections:[電機工程研究所] 期刊論文

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