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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32659


    Title: High voltage GaN Schottky rectifiers
    Authors: Dang,GT;Zhang,AP;Ren,F;Cao,XNA;Pearton,SJ;Cho,H;Han,J;Chyi,JI;Lee,CM;Chuo,CC;Chu,SNG;Wilson,RG
    Contributors: 電機工程研究所
    Keywords: TEMPERATURE-DEPENDENCE;POWER DEVICES;TRANSISTORS;BREAKDOWN;DIODES;FIELD
    Date: 2000
    Issue Date: 2010-07-06 18:35:41 (UTC+8)
    Publisher: 中央大學
    Abstract: Mesa and planar GaN Schottky diode rectifiers vith reverse breakdown voltages (V-RB) up to 550 and >2000 V,respectively. hare been fabricated, The on-state resistance, R-ON, was 6 m Ohm.cm(2) and 0.8 Ohm cm(2), respectivetly, producing figure-of-merit val
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[電機工程研究所] 期刊論文

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