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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32605


    Title: GaN electronics for high power, high temperature applications
    Authors: Pearton,SJ;Ren,F;Zhang,AP;Dang,G;Cao,XA;Lee,KP;Cho,H;Gila,BP;Johnson,JW;Monier,C;Abernathy,CR;Han,J;Baca,AG;Chyi,JI;Lee,CM;Nee,TE;Chuo,CC;Chu,SNG
    Contributors: 電機工程研究所
    Keywords: MICROWAVE
    Date: 2001
    Issue Date: 2010-07-06 18:33:45 (UTC+8)
    Publisher: 中央大學
    Abstract: A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GalGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fab
    Relation: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    Appears in Collections:[電機工程研究所] 期刊論文

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