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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32477

    Title: Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn
    Authors: Polyakov,AY;Smirnov,NB;Govorkov,AV;Kim,J;Ren,F;Overberg,ME;Thaler,GT;Abernathy,CR;Pearton,SJ;Lee,CM;Chyi,JI;Wilson,RG;Zavada,JM
    Contributors: 電機工程研究所
    Date: 2003
    Issue Date: 2010-07-06 18:29:08 (UTC+8)
    Publisher: 中央大學
    Abstract: Electrical and luminescent properties of GaN/InGaN multiquantum well light emitting diodes (MQW LEDs) with the top p-GaN layer implanted with 3 x 10(16) cm(-2) Mn ions for potential spin-polarized emission are reported. The forward current in the Mn-impla
    Appears in Collections:[電機工程研究所] 期刊論文

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