English  |  正體中文  |  简体中文  |  Items with full text/Total items : 66984/66984 (100%)
Visitors : 23132628      Online Users : 262
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32479


    Title: Er diffusion into gallium nitride
    Authors: Chen,CC;Ting,YS;Lee,CC;Chi,GC;Chakraborty,P;Chini,T;Chuang,HW;Tsang,JS;Kuo,CT;Tsai,WC;Chen,SH;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: MOLECULAR-BEAM EPITAXY;DOPED GAN;IMPLANTED GAN;EMISSION;PHOTOLUMINESCENCE;ELECTROLUMINESCENCE;SI;EU
    Date: 2003
    Issue Date: 2010-07-06 18:29:13 (UTC+8)
    Publisher: 中央大學
    Abstract: In this study, we report the diffusion mechanism of Er in GaN and the optical properties of Er-diffused GaN. The diffusion coefficient has been measured by Rutherford backscattering spectroscopy and secondary ion mass spectrometry. Erbium is also implante
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML423View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明