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Showing items 491-500 of 81570. (8157 Page(s) Totally) << < 45 46 47 48 49 50 51 52 53 54 > >> View [10|25|50] records per page

Date	Title	Authors
2024-11-26	董事會結構對企業是否選擇監督CSR單位之影響;The impact of the board structure on monitoring CSR units	林冠汝; Lin, Guan-Ru
2024-11-26	基於氮化鍺碲碳非砷化物選擇器的高熱穩定性、低電壓變異性及高循環耐久性 (>10¹¹) 的物理分析;The Physical Analysis of High Thermal Stability, Low Voltage Variability, and High Endurance (>10¹¹) Based on a Germanium Tellurium Carbon Nitride Non-Arsenide Selector	吳湧峰; Wu, Yung-Feng
2024-11-26	實現全後段製程相容性、基於IGZO雙電晶體及鐵電電容器之非揮發性記憶體;Enabling Fully Back-End-of-Line Compatible in IGZO Based Two Transistor One Ferroelectric Capacitor (2T1F) Non-Volatile Memory	蔡堉秭; Tsai, Yu-Tzu
2024-11-26	微型大氣探空開發及T-POMDA空污實驗應用;The Development of a Miniature Radiosonde System and its Application in T-POMDA Experiment	潘巧玲; Pan, Chiao-Ling
2024-11-26	軸向發電機之改良與設計	林顥倫; Lin, Hao-Lun
2024-11-26	公共污水處理廠污泥脫水濾液流體化床結晶產物特性之研究;A study of crystals characteristics of FBC reactor for resource recovery from sludge dewatering filtrate	秦維潔; Chin, Wei-Chieh
2024-11-25	低溫成長條件下利用金屬有機化學氣相沉積法於氧化矽基板上合成高品質二硫化鉬;Low-temperature condition growth high-quality Molybdenum Disulfide on Silicon Dioxide substrate by Metal Organic Chemical Vapor Deposition	陳廷睿; CHEN, TING-RUI
2024-11-25	應用0.25 μm GaN/SiC HEMT於連續B類 X頻段功率放大器與K頻段 WIPD 覆晶功率放大器暨90奈米 CMOS FR3 寬頻發射器之研製;Design and Implementation of a 0.25 μm GaN/SiC HEMT Continuous Class-B X-Band Power Amplifier, K-Band WIPD Flip-Chip Power Amplifier, and 90-nm CMOS FR3 Wideband Transmitter	陳柏豪; Chen, Po-Hao
2024-11-25	對流尺度資料同化系統中地面觀測同化的變分偏差修正;Variational Bias Correction for Surface Data Assimilation in a Convective-scale Data Assimilation System	林怡萱; Lin, Yi-Hsuan
2024-11-25	整合視覺、力量感測與模糊控制技術之新穎機械手臂組裝系統;A Novel Robotic Assembly System Integrating Vision, Force Sensing, and Fuzzy Control Technologies	李家銘; Li, Jia-Ming

Showing items 491-500 of 81570. (8157 Page(s) Totally) << < 45 46 47 48 49 50 51 52 53 54 > >> View [10|25|50] records per page