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显示项目13671-13680 / 83775. (共8378页)
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日期	题名	作者
1987	ELECTRIC-FIELD ENHANCEMENT NEAR-SURFACE IRREGULARITIES	LEE,FT; LEE,KC; LAI,SK; CHENG,YS; HSU,TM
2003	Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn	Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Overberg,ME; Thaler,GT; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM
1997	Electrical and luminescent characteristics of alpha-SiC:H p-i-n thin-film LED's with graded-gap junctions	Jen,TS; Shin,NF; Laih,LH; Chen,YA; Hong,JW; Chang,CY
2004	Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes	Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Frazier,RM; Gila,BP; Abernathy,CR; Pearton,SJ; Buyanova,IA; Rudko,GY; Chen,WM; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM
1989	ELECTRICAL AND MAGNETIC STUDIES ON GRAIN-BOUNDARY SEGREGATION IN A NI-3AT.PERCENT-SN ALLOY	YAO,YD; CHUANG,TH; LEE,CK
1999	Electrical and optical changes in the near surface of reactively ion etched n-GaN	Chen,JY; Pan,CJ; Chi,GC
2000	Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer	Yang,CC; Wu,MC; Chuo,CC; Chyi,JI; Lin,CF; Chi,GC
2008	Electrical and optical properties of TiO2-doped ZnO films prepared by radio-frequency magnetron sputtering	Chung,Jeng-Lin; Chen,Jyh-Chen; Tseng,Chung-Jen
2003	Electrical characteristics of a-SiGe : H thin-film transistors with Sb/Al binary alloy Schottky source/drain contact	Lin,CS; Yeh,RH; Li,IX; Hong,JW
1998	Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers	Sheu,JK; Su,YK; Chang,SJ; Chi,GC; Lin,KB; Liu,CC; Chiu,CC

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