摘要： The resistance and transmittance of Ti-oxide thin films sputtered on quartz substrates were studied. The electrical and optical properties can be changed by varying the percentage of O 2 introduced during the sputtering. The lowest resistivity for the sputtered Ti-oxide thin film was 2.30 × 10 −2 Ω cm for 12.5% O 2 , which was obtained after annealing at 400°C in ambient oxygen. The results of x-ray photoelectron spectroscopy (XPS) curve-fitting indicate that the Ti-oxide thin film contained both Ti 2 O 3 and TiO 2 phases during deposition. The Ti 2 O 3 phase was transformed into the stable TiO 2 phase during annealing. The Ti 2 O 3 -TiO 2 phase transformation initiated the substitution reaction. The substitution of Ti 4+ ions in the TiO 2 phase for the Ti 3+ ions in the Ti 2 O 3 phase created the free electrons. This Ti 2 O 3 -TiO 2 phase transformation demonstrates the potential mechanism for conduction in the annealed Ti-oxide thin films. The transmittance of the annealed Ti-oxide thin films can be as high as approximately 90% at the 400 nm wavelength with the introduction of 16.5% O 2 . This result indicates that the annealed Ti-oxide thin films are excellent candidates for use as transparent conducting layers for ultraviolet (UV) or near-UV light-emitting diode (LED) devices. 其他題名： Journal of Elec Materi 出版者： Boston: Springer US 出版日期： 2012-01 出處： Journal of electronic materials, 2012-01, Vol.41 (1), p.166-171 資源來源： EBSCOhost OmniFile Full Text Select 版權： TMS 2011 版權： 2015 INIST-CNRS 版權： TMS 2012 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-011-1822-7 識別號： CODEN: JECMA5
