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    NCU Institutional Repository > 理學院 > 化學學系 > 期刊論文 >  Item 987654321/100124


    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/100124


    題名: Silver nanowire-polymer composite electrode for high performance solution-processed thin-film transistors
    作者: 陳銘洲;Chen, Liang-Hsiang;Lin, Pang;Chen, Ming-Chou;Huang, Peng-Yi;Kim, Choongik;Ho, Jia-Chong;Lee, Cheng-Chung
    貢獻者: 理學院化學學系
    關鍵詞: Anthradithiophene;Applied sciences;Conductive electrode;Cross-disciplinary physics: materials science;rheology;Electrical engineering. Electrical power engineering;Electronics;Exact sciences and technology;Materials;Materials science;Metals. Metallurgy;Nanoscale materials and structures: fabrication and characterization;Organic thin-film transistor (OTFT);Physics;Production techniques;Quantum wires;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Silver nanowire;Surface treatment;Transistors
    日期: 2012-01-01
    上傳時間: 2026-04-21 13:50:16 (UTC+8)
    出版者: Elsevier BV;Amsterdam: Elsevier B.V
    摘要: 摘要: [Display omitted] ► Conductive AgNWs/PEDOT:PSS composite films were prepared and characterized. ► The composite films exhibited good electrical and materials properties. ► Solution-processed OTFTs were fabricated using the composite films as conductors. ► The solution-processed TFT showed high electrical performance. Silver nanowires (AgNWs)/poly-(3,4-ethylenedioxythiophene/polystyrene sulphonate) (PEDOT:PSS) composite films as conductive electrode for OTFTs were prepared, and their optical and electrical properties were investigated. The conductive composite films used in this study afforded low sheet resistance of <140Ω/sq and transmittance as high as 70% in the visible region. For the composite film with 0.1wt.% of AgNWs, contact resistance as low as 2.7×104Ωcm was obtained, as examined by Transfer length model (TLM) analysis, and work function of the corresponding film was 5.0eV. Furthermore, the composite films were employed as source and drain electrodes for top-gate/bottom-contact organic thin-film transistors (OTFTs) based on solution-processed 5,11-bistriethylsilylethynyl anthradithiophene (TES-ADT) as organic semiconductor, and the resulting device showed high electrical performance with carrier mobility as high as 0.21cm2/Vs.
    出版者: Amsterdam: Elsevier B.V
    出版日期: 2012-10-01
    出處: Organic electronics, 2012-10, Vol.13 (10), p.1881-1886
    版權: 2012 Elsevier B.V.
    版權: 2015 INIST-CNRS
    識別號: ISSN: 1566-1199
    識別號: EISSN: 1878-5530
    識別號: DOI: 10.1016/j.orgel.2012.05.040
    顯示於類別:[化學學系] 期刊論文

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