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    NCU Institutional Repository > 理學院 > 化學學系 > 期刊論文 >  Item 987654321/100157


    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/100157


    題名: Versatile α,ω-disubstituted tetrathienoacene semiconductors for high performance organic thin-film transistors
    作者: 陳銘洲;Youn, Jangdae;Huang, Peng-Yi;Huang, Yu-Wen;Chen, Ming-Chou;Lin, Yu-Jou;Huang, Hui;Ortiz, Rocio Ponce;Stern, Charlotte;Chung, Ming-Che;Feng, Chieh-Yuan;Chen, Liang-Hsiang;Facchetti, Antonio;Marks, Tobin J.
    貢獻者: 理學院化學學系
    關鍵詞: fused thiophene;n-type organic semiconductor;tetrathienoacene;TTA
    日期: 2012-01-11
    上傳時間: 2026-04-21 13:51:32 (UTC+8)
    出版者: Wiley-VCH Verlag;Weinheim: WILEY-VCH Verlag
    摘要: 摘要: Facile one‐pot [1 + 1 + 2] and [2 + 1 + 1] syntheses of thieno[3,2‐b]thieno[2′,3′:4,5]thieno[2,3‐d]thiophene (tetrathienoacene; TTA) semiconductors are described which enable the efficient realization of a new TTA‐based series for organic thin‐film transistors (OTFTs). For the perfluorophenyl end‐functionalized derivative DFP‐TTA, the molecular structure is determined by single‐crystal X‐ray diffraction. This material exhibits n‐channel transport with a mobility as high as 0.30 cm2V−1s−1 and a high on‐off ratio of 1.8 × 107. Thus, DFP‐TTA has one of the highest electron mobilities of any fused thiophene semiconductor yet discovered. For the phenyl‐substituted analogue, DP‐TTA, p‐channel transport is observed with a mobility as high as 0.21 cm2V−1s−1. For the 2‐benzothiazolyl (BS‐) containing derivative, DBS‐TTA, p‐channel transport is still exhibited with a hole mobility close to 2 × 10−3 cm2V−1s−1. Within this family, carrier mobility magnitudes are strongly dependent on the semiconductor growth conditions and the gate dielectric surface treatment. Perfluorophenyl‐functionalized tetrathienothiophene (DFP‐TTA) exhibits n‐ channel transport with a mobility as high as 0.30 cm2 V−1 s−1 and an on‐off ratio of 1.8 × 107. The large TTA core size and good solid state packing in combination with optimum film growth conditions enhance electron transport in DFP‐TTA thin‐film transistors.
    其他題名: Adv. Funct. Mater
    出版者: Weinheim: WILEY-VCH Verlag
    出版日期: 2012-01-11
    出處: Advanced functional materials, 2012-01, Vol.22 (1), p.48-60
    資源來源: Wiley Online Library Journals
    版權: Copyright © 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
    識別號: ISSN: 1616-301X
    識別號: EISSN: 1616-3028
    識別號: DOI: 10.1002/adfm.201101053
    顯示於類別:[化學學系] 期刊論文

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