摘要： The morphology and charge transport characteristics of semicrystalline poly(3-hexylthiophene) (P3HT) and semicrystalline poly(stearyl acrylate) (PSA) or amorphous poly(methyl methacrylate) (PMMA) with various blending ratios were systematically investigated using different solvents. The P3HT-PSA films prepared from CH sub(2)Cl sub(2) formed well-defined P3HT nanowires with an average diameter of 30 nm, which was larger than that ( similar to 14 nm) of the P3HT-PMMA films, as evidenced by TEM and AFM. The P3HT-PSA nanowire based field effect transistors (FET) could achieve a high hole mobility of 3.2 10 super(-3) cm super(2) V super(-1) s super(-1) using only 2 wt% P3HT composition. The maximum FET mobility of 7.86 10 super(-3) cm super(2) V super(-1) s super(-1) with the on/off ratio of 10 super(5) was obtained in the 10 wt% P3HT-PSA blends, which were higher than those of pristine P3HT and P3HT-PMMA devices. The semicrystalline PSA probably facilitated large P3HT crystallites and led to high FET mobility. Also, the P3HT-PSA FET devices showed lower percolation threshold and better ambient stability than the P3HT-PMMA devices. These results indicated that the crystalline non-conjugated polymers played a critical role in the charge transport and air stability of FETs based on conjugated polymer blends. 出版日期： 2012-01-01 出處： Journal of materials chemistry, 2012-01, Vol.22 (29), p.14682-14690 資源來源： Alma/SFX Local Collection 識別號： ISSN: 0959-9428 識別號： EISSN: 1364-5501 識別號： DOI: 10.1039/c2jm31362f
