摘要： This study produced transparent p-type AlN-doped SnO2 thin films by annealing sputtered sandwich SnO2/AlN/SnO2 thin films. Both Al3+-Sn4+ and N3−O2− substitution reactions—which are the main sources for the hole carriers—were identified by XPS analysis. The hole concentration of the p-type AlN:SnO2 thin films was as high as 1.074 × 1019 cm−3. Using the produced p-AlN:SnO2 thin film, transparent p-AlN:SnO2/n-SnO2:In2O3 p-n junctions were fabricated and characterized as follows: (1) A low leakage current (2.97 × 10−5 A at −5 V); (2) a 2.17 eV turn-on voltage; and (3) a low ideality factor (12.2). 出版者： AIP Publishing 出版日期： 2012-09-17 出處： Applied Physics Letters, 2012-09, Vol.101 (12) 資源來源： American Institute of Physics (AIP) - Revues 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4754134
