Japan Society of Applied Physics;The Japan Society of Applied Physics
摘要:
摘要： Antimony-doped tin oxide (SnO 2 :Sb, ATO) films have been deposited on glass substrates using atmospheric pressure chemical vapor deposition (APCVD) method. The precursors are mixed with SnCl 4 , SbCl 5 , and O 2 to prepare the films. This study used synchrotron grazing incidence X-ray diffraction (GIXRD) to investigate the film microstructure. Our results show that the precursors of chlorine ions were involved in the doping mechanism, causing the microstructure of films to change slightly. The film has an average transmittance between 85.8 and 82.1% within a visible spectral range from 400 to 800 nm. The minimal resistivity was $6.1\times 10^{-4}$ $\Omega$ cm after doping. The synchrotron GIXRD data show that the chlorine ions caused the lattice constant change. A possible mechanism was proposed to explain the enhancement in electrical property due to chlorine dopants. 出版者： The Japan Society of Applied Physics 出版日期： 2012-10-01 出處： Japanese Journal of Applied Physics, 2012-10, Vol.51 (10), p.10NE28-10NE28-4 資源來源： Institute of Physics Journals 識別號： ISSN: 0021-4922 識別號： EISSN: 1347-4065 識別號： DOI: 10.1143/JJAP.51.10NE28
