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| 題名: | High-performance bottom-contact organic thin-film transistors based on benzo[ d, d ′]thieno[3,2-b;4,5-b ′]dithiophenes (BTDTs) derivatives |
| 作者: | 陳銘洲;Huang, Peng-Yi;Chen, Liang-Hsiang;Kim, Choongik;Chang, Hsiu-Chieh;Liang, You-jhih;Feng, Chieh-Yuan;Yeh, Chia-Ming;Ho, Jia-Chong;Lee, Cheng-Chung;Chen, Ming-Chou |
| 貢獻者: | 理學院化學學系 |
| 關鍵詞: | chemical compounds;equipment performance;films (materials);microstructure;semiconductors |
| 日期: | 2012-12-26 |
| 上傳時間: | 2026-04-21 14:03:51 (UTC+8) |
| 出版者: | American Chemical Society;United States: American Chemical Society |
| 摘要: | 摘要： Three benzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene (BTDT) derivatives, end-functionalized with benzothiophenyl (BT-BTDT; 2), benzothieno[3,2-b]thiophenyl (BTT-BTDT; 3), and benzo[d,d′]thieno[3,2-b;4,5-b′]dithiophenyl (BBTDT; 4), were prepared for bottom-contact/bottom-gate organic thin-film transistors (OTFTs). An improved one-pot [2 + 1 + 1] synthetic method of BTDT with improved synthetic yield was achieved, which enabled the efficient realization of new BTDT-based semiconductors. All of the BTDT compounds exhibited high performance p-channel characteristics with carrier mobilities as high as 0.34 cm2/(V s) and a current on/off ratio of 1 × 107, as well as enhanced ambient stability. The device characteristics have been correlated with the film morphologies and microstructures of the corresponding compounds.
其他題名： ACS Appl. Mater. Interfaces
出版者： United States: American Chemical Society
出版日期： 2012-12-26
出處： ACS Applied Materials & Interfaces, 2012-12, Vol.4 (12), p.6992-6998
資源來源： American Chemical Society Journals
版權： Copyright © 2012 American Chemical Society
識別號： ISSN: 1944-8244
識別號： ISSN: 1944-8252
識別號： EISSN: 1944-8252
識別號： DOI: 10.1021/am3022448
識別號： PMID: 23218927 |
| 顯示於類別: | [化學學系] 期刊論文
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