Nature Publishing Group;London: Springer Science and Business Media LLC
摘要:
摘要： Multilevel nonvolatile transistor memories were fabricated with inserted electret dielectric of star-shaped poly((4-diphenylamino)benzyl methacrylate). The devices could be controllably charged and retain the digital states even when the supply voltage was removed. The multilevel data storage characteristics by applying different gate voltages suggested novel ‘write-many-read-many memory’ behaviors. 其他題名： NPG Asia Mater 出版者： London: Springer Science and Business Media LLC 出版日期： 2013-02-01 出處： NPG Asia Materials, 2013-02, Vol.5 (2), p.e35-35 資源來源： Springer Nature Link Open access journals 版權： The Author(s) 2013 識別號： ISSN: 1884-4049 識別號： ISSN: 1884-4057 識別號： EISSN: 1884-4057 識別號： DOI: 10.1038/am.2012.64
