摘要： ZnO:Al films 400nm thick were prepared on (100) Si substrates by magnetron sputtering. Energy dispersive X-ray spectroscopy and transmission electron microscopy (TEM) revealed that in the initial stage of the deposition, an amorphous silicon oxide layer about 4nm thick formed from damage to the Si substrate due to sputtered particle bombardment and the incorporation of Si atoms with oxygen. Subsequently, a crystalline Si (Zn) layer about 30nm thick grew on the silicon oxide layer by co-deposition of Si atoms sputtered away from the substrate with Zn atoms from the target. Finally, a ZnO:Al film with columnar grains was deposited on the Si (Zn) layer. The sputtered particle bombardment greatly influenced the structure of the object films. The (0001) lattice fringes of the ZnO:Al film were observed in high-resolution TEM images, and the forbidden 0001 reflection spots in electron diffraction patterns were attributed to double diffraction. Therefore, the appearance of the forbidden reflection did not imply any ordering of Al atoms and/or O vacancies in the ZnO:Al film. •ZnO:Al films were deposited on (100) Si substrate using magnetron sputtering.•An amorphous silicon oxide layer with a thickness of 4nm was formed on Si substrate.•Crystalline Si (Zn) layer about 30nm thick grew on amorphous silicon oxide layer.•ZnO:Al film comprising columnar grains was deposited on the Si(Zn) layer.•Lattice image of the ZnO:Al film has been interpreted. 出版者： Amsterdam: Elsevier B.V 出版日期： 2013-10-01 出處： Thin Solid Films, 2013-10, Vol.545, p.183-187 版權： 2013 Elsevier B.V. 版權： 2014 INIST-CNRS 識別號： ISSN: 0040-6090 識別號： EISSN: 1879-2731 識別號： DOI: 10.1016/j.tsf.2013.07.079 識別號： CODEN: THSFAP
