摘要： This study examines nanomeshed Pt and Pt(Au) thin films formed by a dewetting process on a p -GaN surface. With prolonged annealing, the Pt(Au) layer shows more stable contact resistance to p -GaN and lower sheet resistance than the Pt layer. L – I curves show that the GaN light-emitting diode (LED) with the Pt(Au) transparent conducting layer (TCL) produces more light output power than the GaN LED with the Pt TCL. The higher light output of the LED with the Pt(Au) TCL is attributed to the lower sheet resistance, which improves current spreading in the active region. 其他題名： Journal of Elec Materi 出版者： Boston: Springer US 出版日期： 2014-01 出處： Journal of electronic materials, 2014-01, Vol.43 (1), p.166-169 資源來源： EBSCOhost OmniFile Full Text Select 版權： TMS 2013 版權： TMS 2014 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-013-2734-5 識別號： CODEN: JECMA5
