摘要： This study investigates electromigration in Bi 2 Te 3 thermoelectric (TE) material systems and the effectiveness of the diffusion barrier under current. The Peltier effect on the interfacial reaction was decoupled from the effect of electromigration. After connecting p - and n -type Bi 2 Te 3 to Sn3Ag0.5Cu (SAC305) solders, different current densities were applied at varying temperatures. The Bi 2 Te 3 samples were fabricated by the spark plasma sintering technique, and an electroless nickel-phosphorous (Ni-P) layer was deposited at the solder/TE interfaces. The experimental results confirm the importance of the Ni diffusion barrier in joint reliability. Intermetallic compound layers (Cu,Ni) 6 Sn 5 and NiTe formed at the solder/Ni-P and Ni-P/substrate interfaces, respectively. The experimental results indicate that the mechanism of NiTe and (Cu,Ni) 6 Sn 5 compound growth was dominated by the Peltier effect at high current density. When the current density was low, the growth of NiTe was affected by electromigration but the changes of thickness for (Cu,Ni) 6 Sn 5 were not obvious. 其他題名： Journal of Elec Materi 出版者： Boston: Springer US 出版日期： 2014-01 出處： Journal of electronic materials, 2014-01, Vol.43 (1), p.284-289 資源來源： EBSCOhost OmniFile Full Text Select 版權： TMS 2013 版權： TMS 2014 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-013-2877-4 識別號： CODEN: JECMA5
