摘要： Maskless H2SO4 wet-etching on sapphire substrates creates three-dimensional pyramidal pattern on sapphire surface. Alunogen self-forming mask grows in H2SO4 etching generating a dynamic self-masking action, which fabricates 3-dimensional pyramidal pattern on the etched sapphire wafers. The slope and size of the pyramids are controlled by rate ratio (k) between alunogen growth rate and c-plane etching rate. Constant k results in flat facet side-planes of sapphire pyramids and varying k in etching produce curved side-planes of the sapphire pyramid. 其他題名： ECS Solid State Lett 出版者： The Electrochemical Society 出版日期： 2015-04-15 出處： ECS solid state letters, 2015-04, Vol.4 (6), p.R35-R38 資源來源： Institute of Physics Open Access Journals 版權： The Author(s) 2015. Published by ECS. 識別號： ISSN: 2162-8742 識別號： ISSN: 2162-8750 識別號： EISSN: 2162-8750 識別號： DOI: 10.1149/2.0051506ssl
