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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/101755


    題名: High dislocation density of tin induced by electric current
    作者: 吳子嘉;Liao, Yi-Han;Liang, Chien-Lung;Lin, Kwang-Lung;Wu, Albert T.
    貢獻者: 工學院化學工程與材料工程學系
    關鍵詞: Deflection;DENSITY;Diffraction;Dislocation density;Dislocation loops;DISLOCATIONS;ELECTRIC CURRENTS;Electron backscatter diffraction;ELECTRON DIFFRACTION;Grain refinement;MATERIALS SCIENCE;RECRYSTALLIZATION;RESOLUTION;STRESSES;TIN;TRANSMISSION ELECTRON MICROSCOPY
    日期: 2015-12-01
    上傳時間: 2026-04-21 14:43:10 (UTC+8)
    出版者: Melville: American Institute of Physics
    摘要: 摘要: A dislocation density of as high as 1017 /m2 in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 103 A/ cm2. The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstätten grains, and recrystallization. The recrystallization gave rise to grain refining.
    出版者: Melville: American Institute of Physics
    出版日期: 2015-12-01
    出處: AIP advances, 2015-12, Vol.5 (12), p.127210-127210-6
    資源來源: Directory of Open Access Journals
    版權: 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
    識別號: ISSN: 2158-3226
    識別號: EISSN: 2158-3226
    識別號: DOI: 10.1063/1.4937909
    顯示於類別:[化學工程與材料工程學系 ] 期刊論文

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