Tsinghua University Press;Beijing: Tsinghua University Press
摘要:
摘要： Electromigration in Cu has been extensively investigated as the root cause of typical breakdown failure in Cu interconnects. In this study Cu nanowires connected to Au electrodes are fabricated and observed using in situ transmission electron microscopy to investigate the electro- and thermo-migration processes that are induced by direct current sweeps. We observe the dynamic evolution of different mass transport mechanisms. A current density on the order of 106 A/cm^2 and a temperature of approximately 400 ℃ are sufficient to induce electro- and thermo-migration, respectively. Observations of the migration processes activated by increasing temperatures indicate that the migration direction of Cu atoms is dependent on the net force from the electric field and electron wind. This work is expected to support future design efforts to improve the robustness of Cu interconnects. 其他題名： Nano Res 其他題名： Nano Research 出版者： Beijing: Tsinghua University Press 出版日期： 2016-04-01 出處： Nano Research, 2016-04, Vol.9 (4), p.1071-1078 版權： Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016 版權： Nano Research is a copyright of Springer, (2016). All Rights Reserved. 識別號： ISSN: 1998-0124 識別號： EISSN: 1998-0000 識別號： DOI: 10.1007/s12274-016-0998-9
