中大學術數位典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/102754
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 94201/94201 (100%)
Visitors : 81558071      Online Users : 3295
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/102754


    Title: Fully transparent resistive memory employing graphene electrodes for eliminating undesired surface effects
    Authors: 楊伯康;Yang, Po-Kang;Chang, Wen-Yuan;Teng, Po-Yuan;Jeng, Shuo-Fang;Lin, Su-Jien;Chiu, Po-Wen;He, Jr-Hau
    Contributors: 生醫理工學院生醫科學與工程學系
    Keywords: Electrodes;Graphene;Indium tin oxide;Random access memory;resistive switching;surface effect;Switches;transparent resistance random access memory (TRRAM);Zinc oxide
    Date: 2013-01-01
    Issue Date: 2026-04-23 11:16:08 (UTC+8)
    Publisher: Institute of Electrical and Electronics Engineers Inc.;IEEE
    Abstract: 摘要: A ZnO-based transparent resistance random access memory (TRRAM) employs atomic layered graphene exhibiting not only excellent transparency (less than 2% absorptance by graphene) but also reversible resistive switching characteristics. The statistical analysis including cycle-to-cycle and cell-to-cell tests for almost 100 cells shows that graphene plays a significant role to suppress the surface effect, giving rise to the notable increase in the switching yield and the insensitivity to the environmental atmosphere. The resistance variation of high-resistance state of ZnO is greatly suppressed by covering graphene as well. The device reliability investigation, such as the endurance more than 10 2 cycles and the retention time longer than 10 4 s, reveals the robust passivation of graphene for TRRAM applications. The obtained insights show guidelines not only for TRRAM device design and optimization against the undesired switching parameter variations but also for developing practically useful applications of graphene.
    其他題名: JPROC
    出版者: IEEE
    出版日期: 2013-07-01
    出處: Proceedings of the IEEE, 2013-07, Vol.101 (7), p.1732-1739
    資源來源: IEEE Electronic Library (IEL)
    識別號: ISSN: 0018-9219
    識別號: EISSN: 1558-2256
    識別號: DOI: 10.1109/JPROC.2013.2260112
    識別號: CODEN: IEEPAD
    Appears in Collections:[Department of Biomedical Sciences and Engineering ] journal & Dissertation

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML22View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明