Fully transparent resistive memory employing graphene electrodes for eliminating undesired surface effects

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題名:	Fully transparent resistive memory employing graphene electrodes for eliminating undesired surface effects
作者:	楊伯康;Yang, Po-Kang;Chang, Wen-Yuan;Teng, Po-Yuan;Jeng, Shuo-Fang;Lin, Su-Jien;Chiu, Po-Wen;He, Jr-Hau
貢獻者:	生醫理工學院生醫科學與工程學系
關鍵詞:	Electrodes;Graphene;Indium tin oxide;Random access memory;resistive switching;surface effect;Switches;transparent resistance random access memory (TRRAM);Zinc oxide
日期:	2013-01-01
上傳時間:	2026-04-23 11:16:08 (UTC+8)
出版者:	Institute of Electrical and Electronics Engineers Inc.;IEEE
摘要:	摘要： A ZnO-based transparent resistance random access memory (TRRAM) employs atomic layered graphene exhibiting not only excellent transparency (less than 2% absorptance by graphene) but also reversible resistive switching characteristics. The statistical analysis including cycle-to-cycle and cell-to-cell tests for almost 100 cells shows that graphene plays a significant role to suppress the surface effect, giving rise to the notable increase in the switching yield and the insensitivity to the environmental atmosphere. The resistance variation of high-resistance state of ZnO is greatly suppressed by covering graphene as well. The device reliability investigation, such as the endurance more than 10 2 cycles and the retention time longer than 10 4 s, reveals the robust passivation of graphene for TRRAM applications. The obtained insights show guidelines not only for TRRAM device design and optimization against the undesired switching parameter variations but also for developing practically useful applications of graphene. 其他題名： JPROC 出版者： IEEE 出版日期： 2013-07-01 出處： Proceedings of the IEEE, 2013-07, Vol.101 (7), p.1732-1739 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 0018-9219 識別號： EISSN: 1558-2256 識別號： DOI: 10.1109/JPROC.2013.2260112 識別號： CODEN: IEEPAD
顯示於類別:	[生醫科學與工程學系] 期刊論文

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