Crystalline silicon interface passivation improvement with a-Si 1-xCx:H and its application in hetero-junction solar cells with intrinsic layer

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题名:	Crystalline silicon interface passivation improvement with a-Si 1-xCx:H and its application in hetero-junction solar cells with intrinsic layer
作者:	李建階;Chang, Teng-Hsiang;Chu, Yen-Ho;Lee, Chien-Chieh;Chang, Jenq-Yang
贡献者:	光電科學研究中心
关键词:	Conversion;Crystal structure;Deposition;Passivation;Photovoltaic cells;Silicon;Silicon carbide;Solar cells
日期:	2012-12-10
上传时间:	2026-04-23 11:21:09 (UTC+8)
摘要:	摘要： Excellent passivation of an n-type Czochralski crystalline silicon surface is made possible by the deposition of hydrogenated silicon carbide (Si1−xCx:H) layers in the electron cyclotron resonance chemical vapor deposition. We investigate the structural effect with various CH4/SiH4 dilution ratios, and the lowest effective surface recombination velocity (21.03 cm/s) that can be obtained. We also demonstrate that the Voc can be improved more than 200 mV by inserting Si1−xCx:H layers to form hetero-junction with intrinsic thin layer (HIT) solar cells. The conversion efficiency of the planar HIT solar cell with μc-Si emitter can reach 13%. 出版日期： 2012-12-10 出處： Applied physics letters, 2012-12, Vol.101 (24) 資源來源： AIP Journals (American Institute of Physics) 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4770308
显示于类别:	[光電科學研究中心] 期刊論文

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