Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition

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題名:	Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition
作者:	李孟錡;Chan, Shih-Hao;Chen, Sheng-Hui;Lin, Wei-Ting;Li, Meng-Chi;Lin, Yung-Chang;Kuo, Chien-Cheng
貢獻者:	光電科學研究中心
關鍵詞:	Chemistry and Materials Science;Condensed Matter Physics;Emission measurements;Low temperature;Materials Science;Materials Science(all);Molecular Medicine;Nano Express;Nanochemistry;Nanoscale Science and Technology;Nanotechnology;Nanotechnology and Microengineering
日期:	2013-01-01
上傳時間:	2026-04-23 11:21:56 (UTC+8)
出版者:	Springer New York;New York: Springer Science and Business Media LLC
摘要:	摘要： AbstractPlasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications. 其他題名： Nanoscale Res Lett 出版者： New York: Springer Science and Business Media LLC 出版日期： 2013-06-12 出處： Nanoscale Research Letters, 2013-06, Vol.8 (1), p.285--285, Article 285 資源來源： ProQuest Open Access Content Collection 版權： Chan et al.; licensee Springer. 2013. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 版權： The Author(s) 2013 版權： Copyright ©2013 Chan et al.; licensee Springer. 2013 Chan et al.; licensee Springer. 識別號： ISSN: 1556-276X 識別號： ISSN: 1931-7573 識別號： EISSN: 1556-276X 識別號： DOI: 10.1186/1556-276x-8-285 識別號： PMID: 23758668
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