摘要： We demonstrate an effective approach to grow high-quality thin film (>1 μm) of multifold Ge/Si/Ge composite quantum dots (CQDs) stacked heterostructures for near infrared photodetection and optical interconnect applications. An otherwise random, self-assembly of variable-fold Ge/Si CQDs has been grown on Si through the insertion of Si spacer layers to produce micron-scale-thick, stacked Ge/Si CQD layers with desired QD morphology and composition distribution. The high crystalline quality of these multifold Ge CQD heterostructures is evidenced by low dark current density of 3.68 pA/μm2, superior photoresponsivity of 267 and 220 mA/W under 850 and 980 nm illumination, respectively, and very fast temporal response time of 0.24 ns measured on the Ge/Si CQD photodetectors. 其他題名： Opt Lett 出版者： United States 出版日期： 2015-05-15 出處： Optics letters, 2015-05, Vol.40 (10), p.2401-2404 資源來源： Optica Publishing Group Journals 識別號： ISSN: 0146-9592 識別號： ISSN: 1539-4794 識別號： EISSN: 1539-4794 識別號： DOI: 10.1364/OL.40.002401 識別號： PMID: 26393750
