FTO films deposited in transition and oxide modes by magnetron sputtering using tin metal target

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103448

Title:	FTO films deposited in transition and oxide modes by magnetron sputtering using tin metal target
Authors:	陳昇暉;Liao, Bo-Huei;Chan, Shih-Hao;Lee, Cheng-Chung;Kuo, Chien-Cheng;Chen, Sheng-Hui;Chiang, Donyau
Contributors:	理學院光電科學與工程學系
Keywords:	Deposition;Electrical properties;Electrical resistivity;Magnetron sputtering;Optical properties;Oxides;Tin;Transmittance
Date:	2014-02-01
Issue Date:	2026-04-23 11:30:40 (UTC+8)
Publisher:	The Optical Society;United States
Abstract:	摘要： Fluorine-doped tin oxide (FTO) films were prepared by pulsed DC magnetron sputtering with a metal Sn target. Two different modes were applied to deposit the FTO films, and their respective optical and electrical properties were evaluated. In the transition mode, the minimum resistivity of the FTO film was 1.63×10(-3) Ω cm with average transmittance of 80.0% in the visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H2 could achieve even lower resistivity to 8.42×10(-4) Ω cm and higher average transmittance up to 81.1% in the visible region. 其他題名： Appl Opt 出版者： United States 出版日期： 2014-02-01 出處： Applied optics (2004), 2014-02, Vol.53 (4), p.A148-A153 資源來源： Optica Publishing Group Journals 識別號： ISSN: 1559-128X 識別號： EISSN: 2155-3165 識別號： EISSN: 1539-4522 識別號： DOI: 10.1364/AO.53.00A148 識別號： PMID: 24514207
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	21	View/Open

社群 sharing

Loading...