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| 題名: | Hybrid YAG/CdSe quantum dots phosphors for white light-emitting diodes |
| 作者: | 王冠文;Chung, Shu-Ru;Wang, Kuan-Wen;Wang, Ming-Wei |
| 貢獻者: | 工學院材料科學與工程研究所 |
| 關鍵詞: | Cadmium selenides;Devices;Emission;Intermetallics;Nanostructure;Phosphors;Quantum dots;Wavelengths;YAG |
| 日期: | 2013-06-01 |
| 上傳時間: | 2026-04-23 11:36:06 (UTC+8) |
| 出版者: | American Scientific Publishers;26650 The Old Road, Suite 208, Valencia, California 91381-0751, USA: American Scientific Publishers |
| 摘要: | 摘要： CdSe quantum dots (QDs) with the emission wavelength of 577 nm, full width at half maximum (FWHM) of 28 nm, quantum yield (QY) of 40% and average particle size of 3.7±0.5 nm are prepared. 1, 3 and 5 wt% of CdSe QDs is blended with commercial YAG:Ce phosphor (called as composite phosphor) and the device performance of YAG-based and composite phosphor-based white light-emitting diode (WLED) is investigated. The color rendering index (CRI) and luminous efficiency could be improved simultaneous for composite phosphor-based WLED. As the applied current increases, the correlated color temperature (CCT), Commission International d'Eclairage (CIE) chromaticity coordinates and CRI of both WLEDs are almost the same when compared with standard condition (20 mA), while the luminous efficiency of both WLEDs decreases with increasing applied current. It is interesting to find that there is a positive effect of QDs on the luminous efficiency and CRI value. This result also reveals that adding a small amount of yellow emitting QDs can not only reduce the scattering of light effectively but increase utilization efficiency of reflection and refraction light, thereby enhancing the efficiency of composite phosphor-based WLED. Moreover, the emission wavelength of 577 nm QDs is longer than that of YAG, it redound to extends emission range resulting in increase the CRI of devices.
其他題名： J Nanosci Nanotechnol
出版者： 26650 The Old Road, Suite 208, Valencia, California 91381-0751, USA: American Scientific Publishers
出版日期： 2013-06-01
出處： Journal of nanoscience and nanotechnology, 2013-06, Vol.13 (6), p.4358-4363
識別號： ISSN: 1533-4880
識別號： DOI: 10.1166/jnn.2013.7209
識別號： PMID: 23862503 |
| 顯示於類別: | [材料科學與工程研究所 ] 期刊論文
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