摘要： In this study, p-type Sb-doped AgInS sub(2) thin films were prepared on indium-tin oxide (ITO) glass substrates via chemical bath deposition (CBD) process. Various Sb-doped AgInS sub(2) thin films, with varying Sb concentration (0.2, 0.4, 0.6, and 0.8 mM) were prepared. We found the 0.6 mM Sb-doped AgInS sub(2) film had the highest photoelectrochemical performance with photocurrent density of -1.22 mA/cm super(2) bias -1.5 V versus SCE reference electrode under a 300 W Xe lamp illumination with the intensity of 100 mW/cm super(2). This value was about 4 times higher than the 0.2 mM Sb-doped AgInS sub(2) film. Enhanced photocurrent density was likely the result of the higher charge carrier density introduced by Sb dopant. 出版日期： 2014-06-01 出處： Nanoscience and nanotechnology letters, 2014-06, Vol.6 (6), p.464-469 識別號： ISSN: 1941-4900 識別號： DOI: 10.1166/nnl.2014.1786
