摘要： Al, Ti co-doped ZnO (ATZO) thin films were prepared on glass substrate via sol-gel dip-coating process. Importantly, we replaced the toxic 2-methoxy-ethanol by nontoxic ethanol as a much safer reagent. The dip-coating was repeated four times and as-obtained thin films were then annealed at 500 °C for 1 h in air. We found that introducing Al and Ti dopant would transfer the principal diffraction peak from (101) to (002), decrease the vibration strength of E2 high and E1 LO, lead a relative smoother surface, blueshift the band gap, decrease resistance and increase photocurrent density. Also, doping Al and Ti arose the open circuit potential and as a result, increased the anti-correction of ATZO films. 其他題名： Nanosci Nanotechnol Lett 出版者： American Scientific Publishers 出版日期： 2014-03-01 出處： Nanoscience and nanotechnology letters, 2014-03, Vol.6 (3), p.210-215 識別號： ISSN: 1941-4900 識別號： EISSN: 1941-4919 識別號： DOI: 10.1166/nnl.2014.1754
