摘要： AlxGa1−xN thin‐film‐based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound AlxGa1−xN is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect. 其他題名： Adv. Mater 出版者： Blackwell Publishing Ltd 出版日期： 2015-10-28 出處： Advanced materials (Weinheim), 2015-10, Vol.27 (40), p.6289-6295 資源來源： Wiley Online Library - AutoHoldings Journals 版權： 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 0935-9648 識別號： EISSN: 1521-4095 識別號： DOI: 10.1002/adma.201502314
