摘要： ► Nanoscale alumina was fabricated on NiAl(100) surface with a STM tip. ► Varied powers (bias×current) give two distinct modes of oxidation. ► In the high-power mode alumina forms on the surface near the tip. ► In the low-power mode alumina grows along direction [001] or [010] of NiAl(100). ► The grown alumina strips have minimal width about 3nm. Nanoscale alumina was fabricated on NiAl (100) surface using a scanning tunneling microscope in an ultrathin vacuum condition. With the tunneling current greater than 0.4nA and the power (bias voltage×tunneling current) greater than 0.24nW, Al and pre-adsorbed O atoms were activated to form alumina (with thickness 0.25–1.0nm) on the surface directly vicinal to the tip; the width and thickness of the grown alumina strips are controllable by the current and bias. With an evidently smaller power and a smaller bias (≦1.0V), crystalline alumina were grown along direction [001] or [010] of NiAl(100) in the tip-scanned area of either O-chemisorbed or oxidized surfaces, independent of the direction of tip movement. The alumina strips grown through the latter mode have minimal width near 3nm. 出版者： Amsterdam: Elsevier B.V 出版日期： 2013-01-01 出處： Applied surface science, 2013-01, Vol.264, p.280-285 版權： 2012 Elsevier B.V. 版權： 2014 INIST-CNRS 識別號： ISSN: 0169-4332 識別號： EISSN: 1873-5584 識別號： DOI: 10.1016/j.apsusc.2012.10.013
