摘要： Strain stability of phosphorus doped pseudomorphically strained Si:C alloy is investigated via high-resolution X-ray diffractometry, Fourier transform infrared spectroscopy, and Hall measurement. Significant strain relaxations are found under post-annealing treatment far below β-SiC precipitation threshold temperature, especially for the highest phosphorus doped case. Most of the substitutional carbon is retained and no further β-SiC formation can be found for all samples investigated. Volume compensation through gettering of interstitial atoms around substitutional carbon is considered as a probable mechanism for the observed strain relaxation. The strain relaxation effect can be further reduced with HF treatment prior to post-annealing process. We found an upper limit for ion implant dose (<1 × 1014 atom/cm2) for the retention of strain stability in phosphorus doped Si:C. 出版者： Melville: American Institute of Physics 出版日期： 2014-07-21 出處： Journal of applied physics, 2014-07, Vol.116 (3) 資源來源： AIP Journals (American Institute of Physics) 版權： 2014 AIP Publishing LLC. 識別號： ISSN: 0021-8979 識別號： EISSN: 1089-7550 識別號： DOI: 10.1063/1.4890303
