摘要： A full X-band push-pull power amplifier (PA) with predistortion linearizer is developed in tsmc super(TM) 0.18- mu m CMOS technology. The broadband performance is achieved by using transformers including a differential Guanella-type transmission line transformer and two magnetically coupled transformers. The linearity of PA is enhanced by feedback topology and the use of predistortion linearizer. Over full X-band from 8 to 12 GHz, the saturated power and maximum power-added efficiency are higher than 21.3 dBm and 16.19%, respectively. The performances of output power at 1-dB compression point and power-added efficiency (PAE) at P sub(1dB) are significantly improved by an output power of 2.2 dBm and a PAE of 12.1%, which contributes to power back-off operation for the application of linear modulation. The chip area, including pads, is 1.05 mm super(2). [copy 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2229-2232, 2013 出版日期： 2013-09-01 出處： Microwave and optical technology letters, 2013-09, Vol.55 (9), p.2229-2232 資源來源： Wiley Online Library 識別號： ISSN: 0895-2477 識別號： EISSN: 1098-2760 識別號： DOI: 10.1002/mop.27804
