摘要： The thermal stability and reliability of AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrates with a 2-μm thick copper interconnection (Cu-INTC) were evaluated. The use of metallic copper as a conducting metal has the advantages of higher thermal conductivity, low cost and low sheet resistance. For comparison, traditional gold metal interconnection (Au-INTC) devices were fabricated under the same process conditions. Thermal infrared (IR) microscopy measurements show that the Cu-INTC devices could function at a lower channel temperature (TCHANNEL) than traditional Au-INTC devices with the same drain current density, because of the low resistivity of the metal. The typical peak transconductance (gm), output power (POUT), power gain (Gp) and power-added-efficiency (PAE) during operation at 100°C were 87.53mS/mm, 22.85dBm, 11.1dB and 25.9% for a Cu-INTC power device with gate width of 1mm and these measured results were better than those of Au-INTC devices. They indicate that the copper metal provides great potential for high-power AlGaN/GaN HEMT applications. 出版者： Kidlington: Elsevier Ltd 出版日期： 2012-11-01 出處： Microelectronics and reliability, 2012-11, Vol.52 (11), p.2556-2560 資源來源： ScienceDirect 版權： 2012 Elsevier Ltd 版權： 2015 INIST-CNRS 識別號： ISSN: 0026-2714 識別號： DOI: 10.1016/j.microrel.2012.05.010 識別號： CODEN: MCRLAS
