Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
摘要:
摘要： This letter reports the effect of growth temperature on carrier transport characteristics in In 0.4 Ga 0.6 Sb/AlSb heterostructure and demonstrates that hole mobility was enhanced by eliminating a parallel conducting channel in the buffer layers. Based on optimized growth conditions, hole mobility as high as 1220 cm 2 /V·s with carrier concentration of 1.3 ×10 12 cm -2 was achieved. A 0.2- μm-gate-length In 0.4 Ga 0.6 Sb/AlSb p-channel device exhibited a maximum drain current of 102 mA/mm, a peak transconductance of 92 mS/mm, and an on-state breakdown voltage over 3 V. The pinchoff was observed for a gate bias of 0.6 V at drain current of 1 mA/mm. The current-gain and power-gain cutoff frequencies were 15 and 20 GHz, respectively. 其他題名： LED 出版者： New York, NY: IEEE 出版日期： 2012-07-01 出處： IEEE Electron Device Letters, 2012-07, Vol.33 (7), p.964-966 資源來源： IEEE Xplore (NTUSG) 版權： 2015 INIST-CNRS 識別號： ISSN: 0741-3106 識別號： EISSN: 1558-0563 識別號： DOI: 10.1109/LED.2012.2193656 識別號： CODEN: EDLEDZ
