摘要： [Display omitted] •The Ir-gate AlSb/InAs HEMT on Si substrate has been studied with reliability evaluation.•The Ir-gate exhibited a superior metal work function.•The Schottky barrier height of InAs/AlSb on silicon was improved.•TEM, SIMS, and low frequency noise measurement were adopted to proof device stability. In this work, the 6-inch AlSb/InAs on Si (001) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses. 出版者： Elsevier B.V 出版日期： 2015-04-20 出處： Microelectronic engineering, 2015-04, Vol.138, p.17-20 版權： 2015 Elsevier B.V. 識別號： ISSN: 0167-9317 識別號： EISSN: 1873-5568 識別號： DOI: 10.1016/j.mee.2015.01.017
