Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
摘要:
摘要： For the first time, we comprehensively evaluate 6T SRAM stability and performance using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on the ITRS 2028 (5.9 nm) node. Our study indicates that, with excellent device electrostatics and superior stability, the monolayer TMD is favored for low-power SRAM applications, while the bilayer TMD, with higher carrier mobility, is more suitable for relaxed channel length and high-performance SRAM applications. 其他題名： TED 出版者： New York: IEEE 出版日期： 2016-02-01 出處： IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.625-630 資源來源： IEEE Electronic Library (IEL) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 識別號： ISSN: 0018-9383 識別號： EISSN: 1557-9646 識別號： DOI: 10.1109/TED.2015.2505064 識別號： CODEN: IETDAI
