Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
摘要:
摘要： In this paper, a novel GaN-based dual-color LED for phosphor-free white-light generation has been demonstrated. By inserting p-type layers with different p-type doping density and thickness into active regions of dual-color GaN LEDs, we can control the ratio of output light intensities from quantum-wells near n- and p-sides. With an optimum sheet charge density of such insertion layer, the intensities of these two colors can be balanced under a much lower driving-current density (45 versus 450 A/cm 2 ) compared with that of reference device without such insertion layer. A 2-D finite-element Poisson and drift-diffusion self-consistent solver including the indium fluctuation is used to design and simulate the device performances. The experimental and simulation results match very well. 其他題名： TED 出版者： New York, NY: IEEE 出版日期： 2013-09-01 出處： IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2821-2826 資源來源： IEEE Electronic Library (IEL) 版權： 2014 INIST-CNRS 識別號： ISSN: 0018-9383 識別號： EISSN: 1557-9646 識別號： DOI: 10.1109/TED.2013.2272803 識別號： CODEN: IETDAI
